Rohm SemiconductorJapan
NPN, SOT-23, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
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View full reportTechnical parameters
| Power | |
|---|---|
| Collector current Io (Ic) [A] | 0.1 |
| Output Current [A] | 0.1 |
| Power Dissipation (PD)[W] | 0.2 |
| Supply voltage VCC 1[V] | 50 |
| Environment and package | |
| Mounting Style | Surface mount |
| Package Code | TO-236AB (SOT-23) |
| Package Size [mm] | 2.4x2.9 (t=1.2) |
| Storage Temperature (Max.)[°C] | 150 |
| Storage Temperature (Min.)[°C] | -55 |
| Other | |
| Emitter base Resistance R2 1 [kΩ] | 10 |
| GI hFE | 33 or more |
| Input resistance R1 1 [kΩ] | 1 |
| Number of terminal | 3 |
| Polarity | NPN |