Rohm SemiconductorJapan
DTA143EUAFRAT106
Single, Pre-Biased Bipolar TransistorsAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 50V |
| 集电极电流(Ic) | 100mA |
| AC and DC characteristics | |
| 直流电流增益(hFE) | 30@10mA,5V |
| Other | |
| 耗散功率(Pd) | 200mW |
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 50V |
| 集电极电流(Ic) | 100mA |
| AC and DC characteristics | |
| 直流电流增益(hFE) | 30@10mA,5V |
| Other | |
| 耗散功率(Pd) | 200mW |