TECH PUBLIC(台舟)China
内置偏置电阻的PNP数字晶体管，简化设备设计并减少寄生效应
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View full reportTechnical parameters
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 50V |
| 集电极电流(Ic) | 100mA |
| Other | |
| 数量 | 1个PNP-预偏置 |
| 耗散功率(Pd) | 200mW |
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内置偏置电阻的PNP数字晶体管，简化设备设计并减少寄生效应
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 50V |
| 集电极电流(Ic) | 100mA |
| Other | |
| 数量 | 1个PNP-预偏置 |
| 耗散功率(Pd) | 200mW |
No documents are linked to this part yet.