Diodes IncorporatedUnited States
NRND = Not Recommended for New Design 10A Silicon Carbide Schottky Diode
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View full reportTechnical parameters
| Power | |
|---|---|
| Forward VoltageDrop V F (V) | 1.7 |
| Maximum Average Rectified Current IO (A) | 10 |
| Maximum Peak Forward Surge Current I FSM (A) | 120 |
| Maximum Reverse Current IR (μA) | 640 |
| Peak Repetitive Reverse Voltage VRRM (V) | 1200 |
| Environment and package | |
| AEC Qualified | Yes |
| Other | |
| Compliance (Only Automotive Supports PPAP) | Standard |
| Configuration | Single |
| @ IF (A) | 10 |
| Product Type | SiC Diodes |
| Total Capacitance CT (pF) | 500 |
| Total Capacitive Charge (nC) | 32 |
| @ VR (V) | 1200 |