Diodes IncorporatedUnited States
Silicon Carbide Schottky Diode
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Forward VoltageDrop V F (V) | 1.7 |
| Maximum Average Rectified Current IO (A) | 4 |
| Maximum Peak Forward Surge Current I FSM (A) | 28 |
| Maximum Reverse Current IR (μA) | 20 |
| Peak Repetitive Reverse Voltage VRRM (V) | 650 |
| Environment and package | |
| AEC Qualified | Yes |
| Other | |
| Compliance (Only Automotive Supports PPAP) | Standard |
| Configuration | Single |
| @ IF (A) | 4 |
| Product Type | Silicon Carbide Schottky Diode |
| Total Capacitance CT (pF) | 163 |
| Total Capacitive Charge (nC) | 5 Qc |
| @ VR (V) | 650 |