Diodes IncorporatedUnited States
DIODE SIL CARBIDE 650V 4A TO252
All alternatives
View full reportTechnical parameters
Key specs
Reverse voltage650 V
Average rectified current4 A
Forward voltage1.7 VMax · 4 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (Type WX) |
| Other | |
| Capacitance @ Vr, F | 159pF @ 100mV, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |