National SemiconductorUnited States
SMALL SIGNAL BIPOLAR TRANSISTOR,
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100µA |
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 926mW |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~105°C(TA) |
| Package | Bulk |
| Package / Case | 16-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 16-SOP |
| Other | |
| Mfr | National Semiconductor |
| Product Status | Active |
| Series | - |
| Transistor Type | 7 NPN Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |