Infineon TechnologiesGermany
DIODE GEN PURP 1.8KV 1050A
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View full reportTechnical parameters
Key specs
Reverse voltage1.8 kV
Average rectified current1.05 kA
Forward voltage1 VMax · 1000 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1050A |
| Current - Reverse Leakage @ Vr | 60 mA @ 1800 V |
| Voltage - DC Reverse (Vr) (Max) | 1800 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1000 A |
| Environment and package | |
| Mounting Type | Clamp On |
| Operating Temperature - Junction | -40°C ~ 180°C |
| Package | Tray |
| Package / Case | DO-200AB, B-PUK |
| Supplier Device Package | - |
| Other | |
| Base Product Number | D1050N |
| Capacitance @ Vr, F | - |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |