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HomeSingle DiodesToshiba Semiconductor and StorageCVJ10F30
CVJ10F30
Toshiba Semiconductor and StorageJapan

CVJ10F30

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Technical parameters

Key specs

Reverse voltage30 V
Average rectified current1 A
Power
IF-二极管正向电流1A
IR-最大反向漏电流50μA
VRRM-反向重复峰值电压30V
Other
CT-总电容Npf
TJ-最大工作结温125℃

Documents

DatasheetDatasheet · 156.2 KB · 2026-09-22Catalog & SelectionCatalog & Selection · 8.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22Application NoteApplication Note · 866.5 KB · 2026-09-22Catalog & SelectionCatalog & Selection · 845.3 KB · 2026-09-22Application NoteApplication Note · 845.1 KB · 2026-09-22Application NoteApplication Note · 701.2 KB · 2026-09-22Catalog & SelectionCatalog & Selection · 522.8 KB · 2026-09-22
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