Central Semiconductor CorpUnited States
MOSFET 2N-CH 30V 3.6A TLM832DS
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.65W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-TDFN Exposed Pad |
| Supplier Device Package | TLM832DS |
| Other | |
| Base Product Number | CTLDM303N |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 1.8A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |