Convert Semiconductor(锴威特半导体)China

CTD06NH034

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Trench MOSFET

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Technical parameters

Environment and package
PackageTO252-2
Other
ESD DiodeNO
FRD DiodeNO
ID (A)20
PolarityN
Qg* (nC)18.2
RDS(ON) (mΩ) 10V typ27
StatusSample
Tech nologyTrench
VDS (V)60
Vth(V) Typ2.6

Documents

DatasheetDatasheet · 1.4 MB · 2026-09-23
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