Convert Semiconductor(锴威特半导体)China

CSSD10N1P7

Active

SGT MOSFET

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Environment and package
PackageTOLT
Other
ESD DiodeNO
FRD DiodeNO
ID (A)300
PolarityN
Qg* (nC)132.6
RDS(ON) (mΩ) 10V typ1.5
StatusSample
Tech nologySGT
VDS (V)100
Vth(V) Typ3

Documents

DatasheetDatasheet · 1.5 MB · 2026-09-23
Open document center