Convert Semiconductor(锴威特半导体)China

CSBH10N1P7

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SGT MOSFET

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Technical parameters

Environment and package
PackageTO263-7
Other
ESD DiodeNO
FRD DiodeNO
ID (A)300
PolarityN
Qg* (nC)132.6
RDS(ON) (mΩ) 10V typ1.3
StatusSample
Tech nologySGT
VDS (V)100
Vth(V) Typ3

Documents

DatasheetDatasheet · 1.4 MB · 2026-09-23
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