Convert Semiconductor(锴威特半导体)China

CSB085N4P6

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SGT MOSFET

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Technical parameters

Environment and package
PackageTO263-2
Other
ESD DiodeNO
FRD DiodeNO
ID (A)120
PolarityN
Qg* (nC)39.1
RDS(ON) (mΩ) 10V typ3.3
StatusSample
Tech nologySGT
VDS (V)85
Vth(V) Typ3

Documents

DatasheetDatasheet · 1.4 MB · 2026-09-23
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