DIODE GEN PURP 600V 700MA S-FLAT
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Technical parameters
Key specs
Reverse voltage600 V
Average rectified current700 mA
Forward voltage2 VMax · 700 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 700mA |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 700 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -40°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | SOD-123F |
| Supplier Device Package | S-FLAT (1.6x3.5) |
| Other | |
| Base Product Number | CRF03 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 100 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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