Central Semiconductor CorpUnited States
CP635-2N3791
Single Bipolar TransistorsAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| IC-最大集电极电流 | 10A |
| VCEO-集射级击穿电压 | 60V |
| AC and DC characteristics | |
| fT-变换频率 | 4MHZ |
| hFE-最小直流增益 | 50 |
| Other | |
| Pd-功率耗散 | 150W |
| VCE(sat)-集射级饱和压降 | 1V |
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