Central Semiconductor CorpUnited States
RF TRANS NPNUHF/VHF
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Technical parameters
| Power | |
|---|---|
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Gain | - |
| Noise Figure (dB Typ @ f) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Tray |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |
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