Comchip TechnologyTaiwan, China
MOSFET
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current6.6 A
On-resistance60 mΩMax · 3.2A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 83.3W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1325 pF @ 30 V |
| Mfr | Comchip Technology |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.2A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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