Comchip TechnologyTaiwan, China
MOSFET P-CH 30V 12A SOP-8
All alternatives
View full report1 alternatives on file, including 1 Chinese alternatives. Sign in to view them.
Technical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current12 A
On-resistance15 mΩMax · 10A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2419 pF @ 15 V |
| Mfr | Comchip Technology |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Documents
No documents are linked to this part yet.