Comchip TechnologyTaiwan, China
MOSFET N-CH 60V 4A SOT223
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current4 A
On-resistance100 mΩMax · 3A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Other | |
| Base Product Number | CMS04 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 15 V |
| Mfr | Comchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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