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Technical parameters

Key specs

TypePNP
Collector-emitter voltage60 V
Collector current600 mAMax
DC current gain100150mA
Power350 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)600 mA
Power - Max350 mW
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition200MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C~150°C(TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
Base Product NumberCMPT2907
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA

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