Central Semiconductor CorpUnited States
MOSFET P-CH 20V 2.3A SOT-23F
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current2.3 A
On-resistance88 mΩMax · 1.2A
Gate threshold voltage1.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 5V |
| Power Dissipation (Max) | 350mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOT-23-3 Flat Leads |
| Supplier Device Package | SOT-23F |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 1.2A, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |