SiC MOSFET 功率半导体器件
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-263-7 |
| Other | |
| ID(A) | 74 |
| RDS(on)(mΩ) | 35 |
| TJ(Max.)(℃) | 175 |
| TJ(Min.)(℃) | -40 |
| VDSmax(V) | 1200 |
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SiC MOSFET 功率半导体器件
| Environment and package | |
|---|---|
| Package | TO-263-7 |
| Other | |
| ID(A) | 74 |
| RDS(on)(mΩ) | 35 |
| TJ(Max.)(℃) | 175 |
| TJ(Min.)(℃) | -40 |
| VDSmax(V) | 1200 |
No documents are linked to this part yet.