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Technical parameters

Power
Current - Collector (Ic) (Max)400mA
Power - Max1W
Voltage - Collector Emitter Breakdown (Max)30V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 50mA, 15V
Frequency - Transition2.4GHz
Gain11.4dB
Noise Figure (dB Typ @ f)8dB @ 200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN

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