Applied Power(应能微)China
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOT-23 |
| Other | |
| Configuration | Single-ESD |
| ID(A) | 0.3 |
| N/P | N |
| Plateform | Trench MOSFET |
| Rdson @VGS10V Max(mΩ) | 3000 |
| Rdson @VGS10V Typ(mΩ) | 1800 |
| Rdson @VGS2.5V Max(mΩ) | 4500 |
| Rdson @VGS2.5V Typ(mΩ) | 2200 |
| Rdson @VGS4.5V Max(mΩ) | 3400 |
| Rdson @VGS4.5V Typ(mΩ) | 1900 |
| VDSS(V) | 60 |
| VGS(th) Max | 1.2 |
| VGS(th) Min | 0.5 |
| VGS(V) | ±20 |