Applied Power(应能微)China
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOT-23-6 |
| Other | |
| Configuration | Dual-ESD |
| ID(A) | 6 |
| N/P | N |
| Plateform | Trench MOSFET |
| Rdson @VGS2.5V Max(mΩ) | 28 |
| Rdson @VGS2.5V Typ(mΩ) | 20 |
| Rdson @VGS4.5V Max(mΩ) | 24 |
| Rdson @VGS4.5V Typ(mΩ) | 17 |
| VDSS(V) | 20 |
| VGS(th) Max | 1 |
| VGS(th) Min | 0.4 |
| VGS(V) | ±10 |