Rochester Electronics, LLCUnited States
CLF1G0060S-10
Transistors - FETs, MOSFETs - Single宽带射频功率氮化镓高电子迁移率晶体管,电流:10W,耐压:150V
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View full reportTechnical parameters
Key specs
Drain-source voltage150 V
Gate threshold voltage2 VMax · 2400uA
| Power | |
|---|---|
| 漏源电压(Vdss) | 150V |
| 阈值电压(Vgs(th)) | 2V@2400uA |
| Environment and package | |
| 工作温度 | -25℃~+85℃ |