VBsemi(微碧半导体)China
CEA6426-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；是一款单N沟道MOSFET，采用Trench工艺制造，适用于各种功率电路应用。SOT89-3；N—Channel沟道,60V；5.5A；RDS(ON)=76mΩ@VGS=10V,VGS=20V；Vth=1.5~3V；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current4.7 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 4.7A |
| Other | |
| 数量 | 1个N沟道 |
| 耗散功率(Pd) | 4W |