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View full reportTechnical parameters
| Power | |
|---|---|
| IC-最大集电极电流 | 0.1A |
| VCEO-集射级击穿电压 | 16V |
| AC and DC characteristics | |
| fT-变换频率 | NMHZ |
| hFE-最小直流增益 | 40 |
| Environment and package | |
| 封装类型1 | DIP |
| 封装类型2 | SOIC |
| 最大工作温度 | 125℃ |
| Other | |
| 引脚数量1 | 16 |
| 引脚数量2 | 16 |
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