JSMSEMI(杰盛微)China
专为中等电压、微电流环境下的高增益放大应用设计,是各类电子设备电路的理想半导体元件。
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View full reportTechnical parameters
Key specs
Collector-emitter voltage50 V
Collector current150 mAMax
DC current gain4002mA
Power400 mWMax
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 50V |
| 集电极电流(Ic) | 150mA |
| AC and DC characteristics | |
| 直流电流增益(hFE) | 400@2mA,6V |
| Other | |
| 耗散功率(Pd) | 400mW |
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