BORN(伯恩半导体)China

BZT52B20S

ActiveSwitching Diodes
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Technical parameters

IZT(mA)5
P.D.(W)0.2
VZ (Max.)@IZT (V)20.4
VZ (Min.)@IZT (V)19.6
VZ (Nom.)@IZT (V)20

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DatasheetDatasheet · 1.0 MB · 2026-09-23
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