Diotec SemiconductorGermany
DIODE GEN PURP 1.3KV 3A DO201
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Technical parameters
Key specs
Reverse voltage1.3 kV
Average rectified current3 A
Forward voltage1.1 VMax · 3 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1300 V |
| Voltage - DC Reverse (Vr) (Max) | 1300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -50°C ~ 150°C |
| Package | Cut Tape (CT) |
| Package / Case | DO-201AA, DO-27, Axial |
| Supplier Device Package | DO-201 |
| Other | |
| Capacitance @ Vr, F | - |
| Mfr | Diotec Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.5 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |