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Technical parameters

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
PackageTOP3 Ins.
Operating junction temperature range-40 to +125 °C
RoHS compliantRoHS (2002/95/EC) compliant packages
RMS on-state current25 A (Tc = 100 °C)
Repetitive peak off-state voltage600 V
Gate trigger currentMax. 50 mA (VD = 12 V, RL = 33 Ω)
Gate trigger voltageMax. 1.3 V (VD = 12 V, RL = 33 Ω)
Holding currentMax. 50 mA (IT = 500 mA)
Critical rate of rise of off-state voltageMin. 500 V/μs (VD = 67% VDRM, gate open, Tj = 125 °C)
On-state voltageMax. 1.55 V (ITM = 35 A, tp = 380 μs, Tj = 25 °C)
Dynamic resistanceMax. 16 mΩ (Tj = 125 °C)
Non repetitive surge peak on-state current260 A (f = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C)
Peak gate current4 A (tp = 20 μs, Tj = 125 °C)
Insulation RMS voltage2500 V (1 minute)
Storage junction temperature range-40 to +150 °C
CertificationUL1557 recognized (file ref: 81734)
All parameters (6)ExpandCollapse
Environment and package
PackageTOP3 isolated package
Other
I_GT(standard)50 mA
I_T(RMS)25 A
T_j-40 to +125 °C
V_DRM/V_RRM600 V
V_INS2500 V

Pinout and package

PackageTOP3 Ins.

PinNameFunctionSource
1A1(Main Terminal 1)
2G(Gate)
3A2(Main Terminal 2)

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.