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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current170 mA
On-resistance6 ΩMax · 250mA
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C170mA (Tj)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)350mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
Base Product NumberBSS123
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs6Ohm @ 250mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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