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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current230 mA
On-resistance6 ΩMax · 170mA
Gate threshold voltage2 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C230mA (Ta)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)500mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds38 pF @ 50 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs6Ohm @ 170mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

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