Nexperia USA Inc.Netherlands
MOSFET N-CH 20V 1.05A TO236AB
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current1.05 A
On-resistance200 mΩMax · 600mA
Gate threshold voltage570 mVMax · 1mA (Typ)
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.05A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 417mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB |
| Other | |
| Base Product Number | BSH105 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 152 pF @ 16 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 600mA, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 570mV @ 1mA (Typ) |
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