Diodes IncorporatedUnited States
MOSFET P-CH 45V 230MA E-LINE
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage45 V
Continuous drain current230 mA
On-resistance14 ΩMax · 200mA
Gate threshold voltage3.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Drain to Source Voltage (Vdss) | 45 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 10 V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 200mA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |