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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage45 V
Continuous drain current90 mA
On-resistance14 ΩMax · 200mA
Gate threshold voltage3.5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C90mA (Ta)
Drain to Source Voltage (Vdss)45 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)330mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25 pF @ 10 V
MfrDiodes Incorporated
Product StatusObsolete
Rds On (Max) @ Id, Vgs14Ohm @ 200mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 1mA

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