Flanged balanced ceramic packa…

Flanged balanced ceramic packa…

Ampleon USA Inc.Netherlands

BLF188XR

RF FETs, MOSFETsSOT539A

1400W, 600MHz,50V LDMOS

1400 W LDMOS power transistor for HF to 600 MHz, SOT539A package, integrated ESD protection, RoHS compliant.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
PackageSOT539A (flanged balanced ceramic package; 2 mounting holes; 4 leads)
RoHSCompliant to Directive 2002/95/EC
drain-source voltageMax 135 V
gate-source voltageMin -6 V, Max +11 V
storage temperatureMin -65 °C, Max +150 °C
junction temperatureMax 225 °C
drain-source breakdown voltageMin 135 V (VGS = 0 V; ID = 5.5 mA)
gate-source threshold voltageMin 1.25 V, Typ 1.9 V, Max 2.25 V (VDS = 10 V; ID = 550 mA)
gate-source quiescent voltageMin 0.68 V, Typ 1.5 V, Max 1.88 V (VDS = 50 V; ID = 20 mA)
drain leakage currentMax 2.8 μA (VGS = 0 V; VDS = 50 V)
drain cut-off currentTyp 77 A (VGS = VGS(th) + 3.75 V; VDS = 10 V)
gate leakage currentMax 280 nA (VGS = 11 V; VDS = 0 V)
drain-source on-state resistanceTyp 0.08 Ω (VGS = VGS(th) + 3.75 V; ID = 19.25 A)
Output power1400 W (CW, 27 MHz, VDS = 50 V)
Operating frequency rangeHF to 600 MHz
ESD protectionIntegrated

Pinout and package

PackageSOT539A (flanged balanced ceramic package; 2 mounting holes; 4 leads)

PinNameFunctionSource
1drain1
2drain2
3gate1
4gate2
5source (connected to flange)

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DatasheetDatasheet · 1.1 MB · 2026-11-09DatasheetDatasheet · 2.1 MB · 2026-10-19
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