GME(银河微电)China
100V, N Channel MOSFETs
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| 最大开启电压 VGS(th) (V) | 2.5 |
| 最大栅极漏电流 IGSS (nA) | ±0.1 |
| 最大栅源电压 VGS (V) | ±20 |
| 最大漏极电流 ID (A) | 19 |
| 沟道极性 Channel Polarity | N |
| 漏源击穿电压 VDSS (V) | 100 |
| Environment and package | |
| REACH 合规 | YES |
| RoHS 合规 | YES |
| 封装 Package | TO-252 |
| Other | |
| AEC-Q 车规认证 | NO |
| 典型导通电阻 RDS(on) | 39 |
| 典型导通电阻 RDS(on) b | 41 |
| 出口管制编码 ECCN | EAR99 |
| 无卤 Halide-free | YES |
| 无铅 Pb-free | YES |
| 最低结温 Tj min (℃) | -55 |
| 最大导通电阻 RDS(on) | 50 |
| 最大导通电阻 RDS(on) b | 60 |
| 最大耗散功率 PD (W) | 42 |
| 最高结温 Tj max (℃) | 150 |
| 生命周期 Marketing Status | Active |
| 结构 Configuration | Single |
Documents
DatasheetDatasheet · 793.1 KB · 2026-09-23EnvironmentalEnvironmental · 2.0 MB · 2026-09-23Package DrawingPackage Drawing · 1.1 MB · 2026-09-23EnvironmentalEnvironmental · 875.1 KB · 2026-09-23Package DrawingPackage Drawing · 782.0 KB · 2026-09-23Package DrawingPackage Drawing · 633.3 KB · 2026-09-23
Open document center