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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current4 AMax
DC current gain40500mA
Power36 WMax
Power
Current - Collector Cutoff (Max)100µA (ICBO)
Current - Collector (Ic) (Max)4 A
Power - Max36 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 1V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Other
Base Product NumberBD442
Mfronsemi
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic800mV @ 300mA, 3A

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