Infineon TechnologiesGermany
SMALL SIGNAL BIPOLAR TRANSISTOR
All alternatives
View full reportTechnical parameters
Key specs
Collector-emitter voltage20 V
Collector current1 AMax
DC current gain85500mA
Power3 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 3 W |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-243AA |
| Supplier Device Package | PG-SOT89-4-2 |
| Other | |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Documents
No documents are linked to this part yet.