Yangjie TechnologyChina
Transistors - Bipolar (BJT) - Si
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage60 V
Collector current1 AMax
DC current gain100150mA
Power500 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 500 mW |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 50MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89 |
| Other | |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Documents
DatasheetDatasheet · 650.2 KB · 2026-09-22EnvironmentalEnvironmental · 4.4 MB · 2026-09-22EnvironmentalEnvironmental · 4.4 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 315.6 KB · 2026-09-22
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