SOT-89
Micro Commercial CoUnited States
PNP plastic encapsulated bipolar transistor, VCEO -60V, IC -1.0A, power 500mW, SOT-89 package, operating temperature -55°C to +150°C, halogen free, RoHS compliant.Checked against the datasheet
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Technical parameters
Key specs
TypePNP
Collector-emitter voltage-60 V
Collector current-1 AMax
DC current gain40 ~ 250Max 250 (VCE=-2.0V，IC=-150mA)，Min 63 (VCE=-2.0V，IC=-5mA)，Min 40 (VCE=-2.0V，IC=-500mA)
Power500 mWMax
Datasheet-verified parameters
20 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Type | PNP | |
| Collector-Emitter Voltage | -60 V | |
| Collector Current | -1.0 A | |
| DC Current Gain | Min 63, Max 250 (VCE=-2.0V, IC=-150mA); Min 63 (VCE=-2.0V, IC=-5mA); Min 40 (VCE=-2.0V, IC=-500mA) | |
| Collector Power Dissipation | 500 mW | |
| Package | SOT-89 |
All parameters (13)
| Power | |
|---|---|
| Ic-最大集电极电流 | 1A |
| IC-最大集电极电流 | 1A |
| VCEO-CE结击穿电压 | 60V |
| VCEO-集射级击穿电压 | 60V |
| AC and DC characteristics | |
| fT-变换频率 | 125MHZ |
| hFE-最小直流增益 | 100 |
| Hfe-最小直流增益 | 100 |
| Environment and package | |
| 封装类型1 | SOT-89 |
| 最大工作温度 | 150℃ |
| Other | |
| Pd-功率耗散 | 0.5W |
| Pd-最大功率耗散 | 1W |
| VCE(sat)-集射级饱和压降 | 0.5V |
| 引脚数量1 | 3 |
Pinout and package
PackageSOT-89
| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Base | ||
| 2 | Collector | ||
| 3 | Emitter | ||
| 4 | Collector |
Documents
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