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Technical parameters

Power
Ic-最大集电极电流1A
IC-最大集电极电流1A
VCEO-CE结击穿电压60V
VCEO-集射级击穿电压60V
AC and DC characteristics
fT-变换频率125MHZ
hFE-最小直流增益100
Hfe-最小直流增益100
Environment and package
封装类型1SOT-89
最大工作温度150℃
Other
Pd-功率耗散0.5W
Pd-最大功率耗散1W
VCE(sat)-集射级饱和压降0.5V
引脚数量13

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