CBI(创基)China
NPN硅AF和开关晶体管，适用于一般AF应用，高击穿电压，低集电极 - 发射极饱和电压
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage125 V
Collector current800 mAMax
Power330 mWMax
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 125V |
| 集电极电流(Ic) | 800mA |
| Other | |
| 晶体管类型 | NPN |
| 耗散功率(Pd) | 330mW |
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