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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
DC current gain1000500mA
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
Base Product NumberBCX38
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-

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