Rohm SemiconductorJapan

BCW60CT116

ActiveTransistors - Bipolar (BJT) - SingleTO-236-3

TRANS NPN 32V 0.2A SST3

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage32 V
Collector current200 mAMax
DC current gain2602mA
Power
Current - Collector Cutoff (Max)-
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)32 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce260 @ 2mA, 5V
Frequency - Transition125MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSST3
Other
Base Product NumberBCW60
MfrRohm Semiconductor
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-

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