NXP SemiconductorsNetherlands
NOW NEXPERIA BCW30 - SMALL SIGNA
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage32 V
Collector current100 mAMax
DC current gain2152mA
Power250 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 250 mW |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 215 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| Mfr | NXP Semiconductors |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA |
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