Infineon TechnologiesGermany
BCR08PNB6327XT
Bipolar Transistor Arrays, Pre-BiasedTRANS NPN/PNP PREBIAS SOT363
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 250mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 170MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package | PG-SOT363-PO |
| Other | |
| Base Product Number | BCR08 |
| Mfr | Infineon Technologies |
| Product Status | Discontinued at Digi-Key |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Series | - |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |